New Product
SUD50P08-26
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
t 1
t 2
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 40 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10 -2
10 -1
1 10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73442.
Document Number: 73442
S-71661-Rev. B, 06-Aug-07
www.vishay.com
6
相关PDF资料
SUD50P10-43-E3 MOSFET P-CH D-S 100V TO252
SUD50P10-43L-E3 MOSFET P-CH D-S 100V TO252
SUM110N04-2M1P-E3 MOSFET N-CH D-S 40V D2PAK
SUM110N05-06L-E3 MOSFET N-CH D-S 55V D2PAK
SUM110N06-3M9H-E3 MOSFET N-CH 60V 110A D2PAK
SUM110N10-09-E3 MOSFET N-CH 100V 110A D2PAK
SUM110P04-04L-E3 MOSFET P-CH D-S 40V D2PAK
SUM110P06-08L-E3 MOSFET P-CH D-S 60V D2PAK
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